Comprehensive understanding of electron mobility and superior performance in sub-10 nm DG ML tetrahex-GeC 2 n-type MOSFETs - Physical Chemistry Chemical Physics (RSC Publishing) DOI:10.1039/D3CP05327J
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Comprehensive understanding of electron mobility and superior performance in sub-10 nm DG ML tetrahex-GeC 2 n-type MOSFETs - Physical Chemistry Chemical Physics (RSC Publishing) DOI:10.1039/D3CP05327J,Electronic and optical properties modulation of heterostructures based on GeP3 and h-BN under biaxial strain - ScienceDirect,Rapid and ultrasensitive surface enhanced Raman scattering detection of hexavalent chromium using magnetic Fe3O4/ZrO2/Ag composite microsphere substrates - ScienceDirect,Thermo-responsive ion imprinted polymer on the surface of magnetic carbon nanospheres for recognizing and capturing low-concentration lithium ion - ScienceDirect,Angle-Resolved Optical Imaging of Interlayer Rotations in Twisted Bilayer Graphene | ACS Applied Materials & Interfaces